| PART |
Description |
Maker |
| IXFA12N50P |
Polar MOSFETs
|
IXYS Corporation
|
| 106BPS035M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| 106BPS100M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| GS6333UR18D2 GS6333UR19D1 GS6333UR19D2 GS6333UR19D |
D-Subminiature Connector; Gender:Female; No. of Contacts:9; Contact Termination:Crimp; D Sub Shell Size:DB9; Body Material:Steel; Body Plating:Zinc; Contact Plating:Gold RoHS Compliant: Yes
CABLE ASSEMBLY; SMA MALE TO N FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; 12" CABLE LENGTH; 3引脚，低功率，P复位电路
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 16V; Case Size: 10x12.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 16V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 16V; Case Size: 18x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 16V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 1000uF; Voltage: 16V; Case Size: 12.5x25 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 16V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 16V; Case Size: 8x11.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 10V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 4700uF; Voltage: 10V; Case Size: 18x35.5 mm; Packaging: Bulk
3 Pin, Low-Power, P Reset Circuits
IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3, SOT-23, 3 PIN, Power Management Circuit
|
VISHAY SEMICONDUCTORS
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRF713 IRF710 MTP2N35 MTP2N40 IRF711 IRF712 |
IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs
N-Channel Power MOSFETs, 2.25 A, 350-400 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET?/a> Power MOSFETs Q-Class
HiPerFET⑩ Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| FMP26-02P |
Polar P & N-Channel Power MOSFET Common Drain Topology
|
IXYS Corporation
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
